The objective of the course is to understand the operating principles and study the characteristics of important Silicon (Si)-based devices, as well as their behavior under static and dynamic operation. Specifically, the course includes the following:

1. A brief review of the electrical properties and charge transport phenomena in semiconductors, the continuity equation, and basic applications.
2. p-n Junction: Open circuit, forward and reverse bias. Characteristics, transient phenomena.
3. Bipolar Junction Transistors (BJT): Operating principle, models, static I-V characteristics, AC behavior, transient phenomena.
4. Metal-Semiconductor (M-S) Contacts: Ohmic and rectifying (Schottky) contacts, open circuit, forward and reverse bias. Characteristics, transient phenomena.
5. Metal-Oxide-Silicon (MOS) Structure: Ideal and real MOS capacitor, C-V characteristics, AC behavior.
6. Field-Effect Transistors (MOSFET): Basic theory, I-V characteristics, AC behavior, and MOSFET frequency response.

The laboratory exercises include the electrical characterization (I-V) of a p-n diode, a Schottky diode, a MOSFET, and a BJT transistor.