Υλικά και Διατάξεις Προηγμένης Τεχνολογίας
| Κωδικός | 3.1.3311.8 |
|---|---|
| Εξάμηνο | 9o |
| Κατηγορία | |
| Ώρες Διδασκαλίας - Ώρες Εργαστηρίου | 3 - 0 |
| Διδάσκοντες | Εμμανουήλ Χουρδάκης |
| Σύνδεσμοι | Helios, Ιστοσελίδα Μαθήματος |
Περιγραφή
The course deals with novel electronic materials and their related high frequency devices that are not based on Si technology and are used in telecommunications, optical networks etc. The main subjects covered are: 1) Electrical properties of III-V semiconductors such as GaAs (energy bands, transport properties, optical properties etc.). 2) GaAs MESFET, static characteristics, equivalent circuit. 3) HEMT (high electron mobility transistor), static characteristics, equivalent circuit. 4) Photodetectors and Photodiodes (LED), device efficiency. 5) Semiconductor LASER. 6) An introduction to the III-V semiconductor nanotechnology is also given, especially for the Resonant Tunneling Diode (RTD).
• Electrical properties of III-V semiconductors such as GaAs (energy bands, transport properties, optical properties etc.).
• GaAs MESFET, static characteristics, equivalent circuit.
• HEMT (high electron mobility transistor), static characteristics, equivalent circuit.
• Photodiodes
• Semiconductor Laser.